Influence of annealing temperature on the properties of In<inf>2</inf>S<inf>3</inf>:Sn films deposited by spray pyrolysis

  • M. Kraini /
  • N. Bouguila /
  • J. El Ghoul /
  • I. Halidou /
  • S. A. Gomez-Lopera /
  • C. Vázquez-Vázquez /
  • M. A. López-Quintela /
  • S. Alaya
Journal ar
Journal of Materials Science: Materials in Electronics
  • Volumen: 26
  • Número: 8
  • Fecha: 23 agosto 2015
  • Páginas: 5774-5782
  • ISSN: 1573482X 09574522
  • Tipo de fuente: Revista
  • DOI: 10.1007/s10854-015-3136-7
  • Tipo de documento: Artículo
  • Editorial: Springer New York
© 2015, Springer Science+Business Media New York.Tin-doped In2S3 films were grown by the chemical spray pyrolysis method using compressed air as a carrier gas. The films were annealed for 2 h at different temperatures (300, 400 and 500 °C) under nitrogen atmosphere. X-ray diffraction data show that In2S3:Sn films are polycrystalline with a cubic phase. The film grain size increases from 26 to 37 nm. The residual microstrain and dislocation network reach the values 3.08 × 10¿3 and 0.73 × 1011 lines cm¿2, respectively, at the annealing temperature of 500 °C. Transmittance decreases with increasing temperature. It varies in the range of 65¿85 % in visible and infrared regions. The optical band gap is found to vary in the range 2.4¿2.85 eV for direct transitions. The best surface state is obtained at 400 °C. The RMS roughness was estimated to be 39.4¿19.8 nm. Electrical measurements at room temperature show that the sheet resistance decreases down to 130 ¿ at 500 °C. The conductance and capacitance characterization at ambient temperature are also investigated and give interesting physical properties for photovoltaic applications.

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