Dark current in standard CMOS pinned photodiodes for time-of-flight sensors
IEEE Workshop on Microelectronics and Electron Devices, WMED
- Fecha: 01 enero 2014
- ISSN: 19473842 19473834
- ISBN: 9781479922222
- Tipo de fuente: Ponencia
- DOI: 10.1109/WMED.2014.6818726
- Tipo de documento: Documento de conferencia
- Editorial: Institute of Electrical and Electronics Engineers Inc.
This paper deals with the optimal design of pinned photodiodes on standard CMOS technologies for Time-of-Flight sensors with the twofold objective of minimizing the dark current while ensuring an optimal charge transfer. The results are verified through CAD simulations with realistic doping profiles for a standard 0.18 ¿m CMOS technology. To the best of our knowledge, no similar analysis have been previously reported in the literature. © 2014 IEEE.