Documento de conferencia

Dark current in standard CMOS pinned photodiodes for time-of-flight sensors

  • J. Illade-Quinteiro /
  • Víctor M. Brea /
  • P. López /
  • B. Blanco-Filgueira /
  • D. Cabello /
  • G. Doménech-Asensi
Conference Proceeding cp
IEEE Workshop on Microelectronics and Electron Devices, WMED
  • Fecha: 01 enero 2014
  • ISSN: 19473842 19473834
  • ISBN: 9781479922222
  • Tipo de fuente: Ponencia
  • DOI: 10.1109/WMED.2014.6818726
  • Tipo de documento: Documento de conferencia
  • Editorial: Institute of Electrical and Electronics Engineers Inc.
This paper deals with the optimal design of pinned photodiodes on standard CMOS technologies for Time-of-Flight sensors with the twofold objective of minimizing the dark current while ensuring an optimal charge transfer. The results are verified through CAD simulations with realistic doping profiles for a standard 0.18 ¿m CMOS technology. To the best of our knowledge, no similar analysis have been previously reported in the literature. © 2014 IEEE.

Palabras clave del autor

    Palabras clave indexadas

      Detalles de financiación