Documento de conferencia

Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

  • E. San Andrés /
  • A. Del Prado /
  • I. Mártil /
  • G. González-Díaz /
  • F. L. Martínez
Journal cp
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
  • Volumen: 21
  • Número: 4
  • Fecha: 01 julio 2003
  • Páginas: 1306-1313
  • ISSN: 10711023
  • Tipo de fuente: Revista
  • Tipo de documento: Documento de conferencia
A study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using oxidized silicon/silicon nitride stacks as gate insulators was presented. Fourier transform infrared spectroscopy was used for the analysis. Electron cyclotron resonance was used to grow the dielectrics.

Palabras clave del autor

    Palabras clave indexadas

      Detalles de financiación