Documento de conferencia

Rapid thermal annealing effects on plasma deposited SiO<inf>x</inf>:H films

  • E. San Andrés /
  • A. Del Prado /
  • I. Mártil /
  • G. González Díaz /
  • F. L. Martinez /
  • D. Bravo /
  • F. J. López
Journal cp
Vacuum
  • Volumen: 67
  • Número: 3-4
  • Fecha: 26 septiembre 2002
  • Páginas: 531-536
  • ISSN: 0042207X
  • Tipo de fuente: Revista
  • DOI: 10.1016/S0042-207X(02)00244-0
  • Tipo de documento: Documento de conferencia
The bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films was lost at temperatures lower than 700°C without any change in the oxygen to silicon ratio of films. RTA temperatures higher than 700°C promote a change in the Si-O-Si stretching position from the initial unannealed value to the 1070-1080cm-1 range independent of the initial film composition. Electron Spin Resonance (ESR) measurements show that all the films contained two types of paramagnetic defects: E¿ (·Si¿O3) and D (·Si¿Si3). Annealing up to 700°C promotes the disappearance of the E¿ centre. For films where the D defect is present (all except the film with x ¿ 2), the concentration of these defects initially decreases for annealing temperatures of 400°C, then continuously increases for temperatures up to 700°C, getting a saturation value in the 1018-1019cm-3 range for higher temperatures. ESR characterisation suggests that annealing at higher temperatures promotes the formation of a high-quality SiO2 matrix in which Si nanocrystals are formed, the D defects being located within these nanocrystals. © 2002 Elsevier Science Ltd. All rights reserved.

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