Documento de conferencia

Lattice recovery by rapid thermal annealing in Mg<sup>+</sup>-implanted InP assessed by Raman spectroscopy

  • B. Marcos /
  • J. Ibáez /
  • R. Cuscó /
  • F. L. Martínez /
  • G. González-Díaz /
  • L. Artús
Journal cp
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
  • Volumen: 175-177
  • Fecha: 01 abril 2001
  • Páginas: 252-256
  • ISSN: 0168583X
  • Tipo de fuente: Revista
  • DOI: 10.1016/S0168-583X(00)00530-9
  • Tipo de documento: Documento de conferencia
Mg+ is the most suitable ion to produce p-type InP layers by means of ion-beam implantation. We present a Raman-scattering study of lattice recovery by rapid thermal annealing on InP implanted with Mg+ at 80 keV, with a dose of 1014 cm-2. Rapid thermal annealings for 10 s at different temperatures between 300°C and 875°C were carried out to study the effect of annealing temperature in the recovery of the InP lattice and on implant activation. © 2001 Elsevier Science B.V.

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