Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry

  • A. Strass /
  • P. Bieringer /
  • W. Hansch /
  • V. Fuenzalida /
  • A. Alvarez /
  • J. Luna /
  • I. Martil /
  • F. L. Martinez /
  • I. Eisele
Journal ar
Thin Solid Films
  • Volumen: 349
  • Número: 1-2
  • Fecha: 30 julio 1999
  • Páginas: 135-146
  • ISSN: 00406090
  • Tipo de fuente: Revista
  • Tipo de documento: Artículo
We developed and tested three MBE-compatible processes for the deposition of high-quality low-temperature silicon oxides and oxynitrides in the ultra high vacuum at substrate temperatures between room temperature and 500°C: gas enhanced evaporation (GEE), plasma enhanced evaporation (PEE) and plasma enhanced oxidation (PEO). The deposited layers were thoroughly investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of ellipsometry, mechanical profilometry, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), Fourier transform infrared (FTIR) spectroscopy, and by electrical measurements (I-V, C-V) on MOS structures. A model of the growth mechanism for each of the processes is suggested. © 1999 Elsevier Science Ireland Ltd. All rights reserved.

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