An undergraduate experiment: The determination of the structure of Ge and Si based bipolar transistors

Journal ar
International Journal of Electrical Engineering Education
  • Volumen: 34
  • Número: 1
  • Fecha: 01 diciembre 1997
  • Páginas: 16-27
  • ISSN: 00207209
  • Tipo de fuente: Revista
  • Tipo de documento: Artículo
We present an experimental procedure to measure physical parameters of Ge-alloyed and Si-diffused discrete bipolar junction transistors. By measuring properly both the I-V and C-V characteristics, we determine the doping of the emitter, base and collector zones and also the emitter and collector areas.

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