Rapid thermally annealed plasma deposited SiN<inf>x</inf>:H thin films: Application to metal-insulator-semiconductor structures with Si, In <inf>0.53</inf>Ga<inf>0.47</inf> As, and InP

  • I. Mártil /
  • A. Del Prado /
  • E. San Andrés /
  • G. González Díaz /
  • F. L. Martínez
Journal ar
Journal of Applied Physics
  • Volumen: 94
  • Número: 4
  • Fecha: 15 August 2003
  • Páginas: 2642-2653
  • ISSN: 00218979
  • Source Type: Journal
  • DOI: 10.1063/1.1592625
  • Document Type: Article
Rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films was studied using electron cyclotron resonance plasma method. The bulk properties of the SiNx:H were dependent on the semiconductor type doping. It was shown that the dual-layer gate structure Al/SiN1.5:H/Si1.6:H/InP has interface properties of device quality that allows to use the structure as the gate zone in MISFET devices.

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