Conference Paper

Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

  • E. San Andrés /
  • A. Del Prado /
  • I. Mártil /
  • G. González-Díaz /
  • F. L. Martínez
Journal cp
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
  • Volumen: 21
  • Número: 4
  • Fecha: 01 July 2003
  • Páginas: 1306-1313
  • ISSN: 10711023
  • Source Type: Journal
  • Document Type: Conference Paper
A study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using oxidized silicon/silicon nitride stacks as gate insulators was presented. Fourier transform infrared spectroscopy was used for the analysis. Electron cyclotron resonance was used to grow the dielectrics.

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