Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
- Volumen: 21
- Número: 4
- Fecha: 01 July 2003
- Páginas: 1306-1313
- ISSN: 10711023
- Source Type: Journal
- Document Type: Conference Paper
A study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using oxidized silicon/silicon nitride stacks as gate insulators was presented. Fourier transform infrared spectroscopy was used for the analysis. Electron cyclotron resonance was used to grow the dielectrics.