Defect structure of SiNx:H films and its evolution with annealing temperature

Journal ar
Journal of Applied Physics
  • Volumen: 88
  • Número: 4
  • Fecha: 15 August 2000
  • Páginas: 2149-2151
  • ISSN: 00218979
  • Source Type: Journal
  • Document Type: Article
  • Publisher: American Institute of Physics Inc.
The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600°C for those compositions in which the nitrogen-to-silicon ratio is above the percolation threshold of the Si-Si bonds in the nitride lattice. The nature of this process is discussed and attributed to a thermally activated charge transfer between metastable defects. No such relaxation occurs in the films with a composition below the percolation threshold, possibly due to a positive correlation energy and a structural lack of flexibility. For higher annealing temperatures, an increase of the defect density is observed and associated with the thermal release of hydrogen. © 2000 American Institute of Physics.

Author keywords

    Indexed keywords

      Funding details