Influence of rapid thermal annealing processes on the properties of SiN<inf>x</inf>:H films deposited by the electron cyclotron resonance method

Journal ar
Journal of Non-Crystalline Solids
  • Volumen: 227-230
  • Número: PART 1
  • Fecha: 01 May 1998
  • Páginas: 523-527
  • ISSN: 00223093
  • Source Type: Journal
  • Document Type: Article
We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films deposited at room temperature by the electron cyclotron resonance plasma method. Films with three different as-grown compositions have been studied, namely x = 0.97, 1.43 and 1.55. Annealing effects were related to film composition. In films with the presence of both Si-H and N-H bonds (as-grown compositions x = 0.97 and 1.43), we found that a reorganization of bonds takes place at temperatures ¿ 500°C, where the well-known cross linking reaction Si-Si + N-H ¿ Si-H + Si-N occurs without detectable release of hydrogen. In the same range of temperatures, an increase of the band gap was observed and attributed to Si-Si bond substitution for Si-H, but no changes in composition were detected. At higher temperatures (T ¿ 600°C), the optical gap decreases and both Si-H and N-H bonds are lost along with a release of hydrogen and nitrogen. For the films with an as-grown composition x = 1.55, we observe that the release of hydrogen only occurs at temperatures above 900°C, but it is not accompanied by any loss of nitrogen. An increase of the optical gap until the release of hydrogen begins and a decrease thereafter is observed. © 1998 Elsevier Science B.V. All rights reserved.

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