An undergraduate experiment: The determination of the structure of Ge and Si based bipolar transistors
International Journal of Electrical Engineering Education
- Volumen: 34
- Número: 1
- Fecha: 01 December 1997
- Páginas: 16-27
- ISSN: 00207209
- Source Type: Journal
- Document Type: Article
We present an experimental procedure to measure physical parameters of Ge-alloyed and Si-diffused discrete bipolar junction transistors. By measuring properly both the I-V and C-V characteristics, we determine the doping of the emitter, base and collector zones and also the emitter and collector areas.